http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080071898-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3d399368a937b40c27a11c5966e6150 |
| publicationDate | 2008-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080071898-A |
| titleOfInvention | Manufacturing Method of Thin Film Semiconductor Device |
| abstract | It is possible to reduce the fixed charge and the interfacial state in the film in the gate insulating film without increasing the gate insulating film of the lower layer of the semiconductor thin film serving as the active layer and increasing the process order, thereby providing a highly reliable bottom gate type TFT. Provided is a method for manufacturing a thin film semiconductor device. A gate electrode is formed on the substrate, and a gate insulating film using a silicon oxynitride film is formed on the substrate while the gate electrode is covered. After the semiconductor thin film is formed on the gate insulating film, the heat treatment is performed in an oxidative atmosphere containing oxygen, thereby modifying oxygen by bonding oxygen to the oxygen deficiency portion in the silicon oxynitride film constituting the gate insulating film. This heat treatment is performed in a pressurized steam atmosphere. In this heat treatment, a thermal oxide film is grown on the surface layer of the semiconductor thin film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150101412-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150101411-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170085070-A |
| priorityDate | 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.