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filingDate 2008-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080071089-A
titleOfInvention Chemical mechanical polishing pad
abstract The polishing pad is suitable for planarizing one or more of semiconductor, optical, and magnetic substrates. The polishing pad has a polymer matrix containing a bulk maximum tensile strength of at least 4,000 psi (27.6 MPa) and closed bubble voids. The closed bubble voids have an average diameter of 1 to 50 μm and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant (τ) of 1 to 10 μm as a result of the inherent porosity of the polymer matrix and the surface texture developed by performing periodic or continuous conditioning with the abrasive. The surface texture has a characteristic half height half width (W 1/2 ) that is below the τ value.n n n n Polishing Pads, Diamond Conditioning, Dishes, Polymer Matrix, Bulk Maximum Tensile Strength
priorityDate 2007-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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