| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| filingDate |
2007-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ab098c1356235bf0929f224a6c063a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c1a889cb7c7717f7f82df20a149bbcb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07 |
| publicationDate |
2008-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080068244-A |
| titleOfInvention |
Light Emitting Diodes Using Surface Plasmons |
| abstract |
A light emitting diode is disclosed. The light emitting diode includes a surface plasmon layer made of a metal layer such as silver, aluminum or gold between the active layer and the n-type gallium nitride thin film or the active layer and the n-type AlGaN cladding layer. In the light emitting diode having the surface plasmon layer, the internal quantum efficiency of the light emitting diode is greatly improved by the resonance phenomenon between the surface plasmon layer of the metal and the active layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8581230-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8349743-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101038923-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2355179-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8115230-B2 |
| priorityDate |
2007-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |