| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54453 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F9-7073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c9a97303f324ba716d2a8850240d8ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99c81e1d04dafceabe0183918b570d45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdb3ae873f0b37083398b01667dba5d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7845637ac493a99d5d23df8079e2868a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7085a6a8cd40b06553da662dccb0d950 |
| publicationDate |
2008-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080059596-A |
| titleOfInvention |
Semiconductor substrate and manufacturing method thereof |
| abstract |
Provided is a semiconductor substrate on which an alignment mark that can be used for alignment can be used even after the epitaxial film is planarized to form an impurity diffusion layer. The trench 11 is formed in the alignment region of the N + type substrate 1, and the void 3 remains after the N − type layer 2 is formed using the trench 11. The void 3 formed in the N + type substrate 1 can be used as an alignment mark. Therefore, the semiconductor substrate can be aligned in the subsequent manufacturing process using the semiconductor substrate, and each element constituting the semiconductor device can be accurately formed at a desired position. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159675-B2 |
| priorityDate |
2005-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |