http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080059517-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2603-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2007-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d08bfbb914272a63018aee5ccc2bbb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fae1569bdd2e7a3c69ec6e378a4d433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a983d8c12d9fa2e0546cdfc44737befb |
| publicationDate | 2008-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080059517-A |
| titleOfInvention | Positive resist material and pattern formation method |
| abstract | The present invention provides a resist material that greatly improves resolution in photolithography using a high energy ray such as an ArF excimer laser light as a light source, and has excellent resistance to surface roughness and side lobes when using a halftone mask, and the resist material. It provides a pattern forming method used.n n n The present invention is a positive resist material, at leastn n n Resin component (A) which has a repeating unit represented by following General formula (1),n n n A photoacid generator (B) generating a sulfonic acid represented by the following Chemical Formula 2 in response to a high energy ray,n n n An onium salt (C) having a structure in which a cation is a sulfonium represented by the following formula (3) or ammonium represented by the following formula (4), and an anion is represented by any one of the following formulas (5) to (7):n n n It relates to a positive resist material, characterized in that it contains.n n n <Formula 1>n n n n n n n n <Formula 2>n n n n n n n n <Formula 3>n n n n n n n n <Formula 4>n n n n n n n n <Formula 5>n n n n n n n n <Formula 6>n n n n n n n n <Formula 7> |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101879903-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160069510-A |
| priorityDate | 2006-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.