| abstract |
The present invention provides a method of depositing metal silicon nitride on a substrate, the method comprising adsorbing a metal amide to a heated substrate, purging a non-adsorbed metal amide, and a silicon containing source having one or more Si-H 3 fragments Contacting a heated substrate to react with the adsorbed metal amide, the silicon-containing source beingn n n n n n n n Having one or more H 3 Si—NR 0 2 groups, wherein R 0 is SiH 3 , selected from the group consisting of one or more of wherein R and R 1 are generally from 2 to about Aliphatic groups having 10 carbon atoms, for example branched alkyl, cycloalkyl, and in the above formula (A), R and R 1 may be bonded to a cyclic group, and R 2 is a single bond, (CH 2 ) n , ring or SiH 2 ], and purging the unreacted silicon-containing source. |