| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2006-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43d6479c6f172c26827ee2546124d943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec8b49d1e0dcb00c9c4184320532fb5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfdfa55ab7087edada5ea6783e523ccd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a79ec28601c4cce3345477226e5c0621 |
| publicationDate |
2008-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080051754-A |
| titleOfInvention |
Semiconductor device and manufacturing method |
| abstract |
The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device using a carbon nanotube or nanowire as a lower electrode of the capacitor and a method for manufacturing the same. The semiconductor device of the present invention for achieving the above technical problem, the lower electrode having a plurality of tubes or wires on the semiconductor substrate; A dielectric film formed on the surface of the lower electrode; And an upper electrode formed on the surface of the dielectric layer, wherein each of the tubes or wires is disposed radially around a lower portion of the tubes or wires. According to the semiconductor device and the method of manufacturing the semiconductor device according to the present invention, the capacitor capacitance can be increased by maximizing the area of the lower electrode of the capacitor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349976-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014010809-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9321633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9222190-B2 |
| priorityDate |
2006-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |