| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2006-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d33a39a73347d2270a4aed623f70c200
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbfb5af0ab03540eff6f5113f532c92d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e04eb4d83ec3f3ba12b90ff4ebf5bdb |
| publicationDate |
2008-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080050785-A |
| titleOfInvention |
Manufacturing Method of Flash Memory Device |
| abstract |
The present invention uses a mask film pattern on a semiconductor substrate on which a word line region and a selection line region are defined, thereby performing an ion implantation process on the exposed semiconductor substrate between the word line region and the selection line region under conditions different from those of the word line region. A method of manufacturing a flash memory device capable of improving prevention and yield is proposed. |
| priorityDate |
2006-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |