http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080047923-A

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filingDate 2006-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2f13608ef2557cb139fd61a24a67b4a
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publicationDate 2008-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080047923-A
titleOfInvention Photosensitive sensor and manufacturing method thereof
abstract The present invention relates to a light sensing sensor and a manufacturing method thereof, comprising: an amorphous silicon thin film transistor capable of sensing light; A storage capacitor capable of storing charges generated in the amorphous silicon thin film transistor; It consists of a photosensitive sensor consisting of a polycrystalline silicon thin film transistor for switching to move the charge stored in the storage capacitor.n n n Therefore, the present invention can reduce the size of the switching transistor and increase the size of the sensor transistor by using a polycrystalline silicon having a high charge transfer characteristics, the effect of improving the sensing characteristics There is.
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Total number of triples: 31.