| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_01e48e78fadaaec045333f9ad5a6e0b5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0041 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2006-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40aa69cb575e714f336f7a2c2205af4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a3eb0f3fcd726c028bcf0a236b62a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c17ad54db490eee0a30c8c55e3d6bab |
| publicationDate |
2008-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080042141-A |
| titleOfInvention |
Negative Photoresist for Silicon JOH Etching without Silicon Nitride |
| abstract |
New photoresists are provided for use during the manufacture of semiconductors and MEMS devices. The primer layer preferably comprises silane that is dissolved or dispersed in the solvent system. The photoresist layer comprises a copolymer made from styrene, acrylonitrile, and an epoxy containing monomer. The photoresist layer comprises a photoacid generator and is preferably negative-acting. |
| priorityDate |
2005-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |