http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080039010-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6f0298acc2f7952dc29a440d452d6bf |
| publicationDate | 2008-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080039010-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, the method comprising: forming a pattern having a structure in which a first barrier metal film, a metal film, a second barrier metal film, a buffer insulating film, and a first insulating film are stacked on a semiconductor substrate; Forming a second insulating film over the semiconductor substrate including the pattern, etching the second insulating film so that the upper portion of the first insulating film is partially exposed, removing the first insulating film, 2 is a step of removing a portion of the insulating film side to form a metal wiring contact hole. |
| priorityDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.