abstract |
A semiconductor device having a heat-resistant resin film commonly used for flip chip connection using inverted bumps or gold bumps and an epoxy resin compound laminated thereon, particularly for improving adhesion after long-term storage under high temperature, high humidity, and semiconductor devices. A method of manufacturing a semiconductor device, particularly a surface modification treatment method, for improving the reliability of the device is provided.n n n A semiconductor device having a heat resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, wherein the surface of the heat resistant resin film on which the epoxy resin compound layer is laminated contains at least one of nitrogen, ammonia and hydrazine. It is a manufacturing method of the semiconductor device characterized by performing a plasma process using nitrogen atom containing gas. |