http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080035651-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6af99903e345d37f5733d1c3959c1058 |
| publicationDate | 2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080035651-A |
| titleOfInvention | Monolithic Semiconductor Laser |
| abstract | On the semiconductor substrate 1, the current narrowing is provided in the infrared light emitting layer forming portion 9a having the n-type cladding layer 2a, the active layer 3a, and the p-type cladding layer 4a in which the ridges are formed. A red light-emitting layer forming portion 9b having an AlGaAs-based semiconductor laser element 10a composed of a layer 5a, an n-type cladding layer 2b, an active layer 3b, and a p-type cladding layer 4b in which a ridge portion is formed, An InGaAlP-based semiconductor laser device 10b composed of a current blocking layer 5a provided at the ridge portion side is provided, and the current blocking layer of both devices is made of the same material, and the band gap of the active layer 3b of the red light emitting layer forming portion. It is formed of a larger bandgap material. As a result, a monolithic semiconductor laser capable of high temperature and high power operation is obtained without increasing the number of times of crystal growth. |
| priorityDate | 2005-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.