| abstract |
The present invention provides a semiconductor device comprising a substrate, an insulating film made of a fluorine-added carbon film formed on the substrate, a barrier layer made of a silicon nitride film and a film containing silicon, carbon and nitrogen formed on the insulating film, Wherein the barrier layer is formed by depositing a silicon nitride film and a film containing silicon, carbon, and nitrogen from the bottom in this order, and the fluorine- And functions to suppress the movement of fluorine in the added carbon film to the hard mask layer. |