http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080034274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b31896b0595e5629c470c80b74b2d2e4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate | 2006-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c54d4550467ecede4cca8883f36dce0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0029407faa258c41cc313ae0a86f294 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cf7df1f3b6c34f999cb9e9ee3f6fba4 |
| publicationDate | 2008-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080034274-A |
| titleOfInvention | Gate electrode manufacturing method on a flexible organic substrate using the plating process, and organic semiconductor device manufacturing method using the same |
| abstract | The present invention relates to a method of forming a gate electrode on a flexible organic substrate using a plating process, and to a method of manufacturing an organic semiconductor device using the same. The method of manufacturing an organic semiconductor device according to the present invention includes preparing a substrate made of a flexible organic material. step; Forming an adhesive layer having high adhesion to the substrate on one surface of the substrate; Forming a seed layer on one surface of the adhesive layer to increase the plating property of the gate electrode; Forming a photoresist film on the seed layer; Patterning the photoresist using a mask having a pattern formed in advance; Forming a gate electrode on the pattern formed on the photosensitive film; Removing the photosensitive film; Removing the adhesive layer and the seed layer in regions other than the gate electrode; Forming an insulator layer made of an organic material on one surface of the gate electrode; Forming a semiconductor layer made of an organic material on one surface of the insulator layer; And forming a source and a drain electrode layer by using a shadow mask on one surface of the semiconductor layer. As described above, the present invention improves adhesion and secures flexibility when forming a semiconductor device on a polymer substrate, and reduces the process cost and enables a low temperature process as compared with the conventional vacuum deposition method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101140686-B1 |
| priorityDate | 2006-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.