| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbd8dd5a7e0ffec7405b10674ed6424c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3013892cdaec74e5191ad0b1ee600145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5eb70aa6995a6a91b4f412e9f8e210d6 |
| publicationDate |
2008-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080034022-A |
| titleOfInvention |
Film formation method of III nitrides, such as gallium nitride |
| abstract |
In the present invention, a group III nitride such as GaN is formed by using an atmospheric pressure plasma.n n n The reactor chamber 12 is filled with pure nitrogen at approximately atmospheric pressure of about 40 kPa. The c-side sapphire substrate 90 is set on the electrode 14. The substrate temperature is set at 650 ° C. with the heater 15. An electric field is applied between the electrodes 13 and 14 to form the discharge space 11a. A small amount of trimethylgallium is added to N 2 in the gas supply system 20, and supplied to the discharge space 11a to be brought into contact with the sapphire substrate 90. The V / III ratio on the substrate 90 is 10 to 100000. |
| priorityDate |
2005-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |