| abstract |
The present invention relates to a method for forming a metal wiring of a semiconductor device which can prevent the loss of sidewalls when etching the wiring metal film formed by using aluminum, and patterning the wiring metal film by forming a spacer on the side of the etch stop layer pattern. By forming the metal wirings, the sidewalls of the metal wirings can be prevented from being lost in the etching process, thereby preventing the reduction of the critical dimension, and the spacers overhanging when the interlayer insulating film is buried between the metal wirings. Since an air gap is formed between the metal wires, the capacitance value can be minimized, thereby reducing the RC delay and improving the reliability of the metal wires, thereby improving the electrical characteristics of the device. |