http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080029654-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed35b19a1b5fb69f3215812f841c530d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd315542802e4b6bd322a9f26d93305f |
| publicationDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080029654-A |
| titleOfInvention | Device Separating Method of Semiconductor Device |
| abstract | The present invention is to provide a method for forming a device isolation film of a semiconductor device that can prevent the loss of the liner nitride film that causes the moat, the method of forming a device isolation film of a semiconductor device of the present invention to prepare a substrate with a trench step; Forming a sidewall oxide film on a surface of the trench; Forming a liner nitride film on the sidewall oxide film; Oxidizing a portion of the liner nitride film to form an oxynitride film; Forming an insulating layer on the oxynitride layer to gap-fill the trench; And planarizing the insulating film, wherein the above-described present invention oxidizes a portion of the liner nitride film before the gap fill oxide film is deposited so that the gate oxide film thinning phenomenon in the moat region caused by the thickness change of the liner nitride film according to the process proceeds. Can be prevented and thus the reliability of the gate oxide film can be improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11659660-B2 |
| priorityDate | 2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.