http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080029316-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c4b35e4d3064743ed85d44ee31ae644 |
| publicationDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080029316-A |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | The present invention can suppress voids when forming an isolation layer of a semiconductor device, prevent degradation of cycling characteristics of the device, and can suppress the occurrence of active bending. According to the present invention, there is provided a substrate in which a tunnel oxide film, a gate forming conductive film, and a pad nitride film are sequentially stacked, and a portion of the pad nitride film, the conductive film, the tunnel oxide film, and the substrate is etched to form a trench. Forming a trench, depositing a first insulating film for device isolation on a top surface of the entire structure so that a portion of the trench is filled, and depositing a sacrificial film on the first insulating film so that the trench is completely filled; Etching the sacrificial layer and the first insulating layer to expose the pad nitride layer, and the pad nitride layer so that the aspect ratio of the trench is lowered And removing the film, removing the sacrificial film, and forming a second insulating film, which is formed of the same material as the first insulating film, to fill the trench. |
| priorityDate | 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.