| abstract |
The present invention provides a method for obtaining a bonded portion having sufficient bonding strength at a relatively low temperature in die bonding of a semiconductor chip. At least one metal powder selected from gold powder, silver powder, platinum powder, or palladium powder having a purity of 99.9% by weight or more and an average particle diameter of 0.005 µm to 1.0 µm in the semiconductor chip 10, and a metal which is an organic solvent Paste 20 was applied. After apply | coating the metal paste 20, it was vacuum-dried in the dryer, the chip was heated at 230 degreeC for 30 minutes, and the metal paste was sintered, and it was set as the powder metal sintered compact 21. Next, the Ni plate 30 is placed on the semiconductor chip 10, and heated and pressed to join. |