| abstract |
Methods of electrically connecting I / O bond-pads of a chip to corresponding I / O bond-pads of a substrate are disclosed. In the illustrated method, each stud-bump is formed on each I / O bond-pad of the substrate. The stud-bumps may be made of fusing material, or a fusing material layer may be formed on each I / O bond-pad of the chip. The chip is flipped and placed on the stud-bumps so that the I / O bond-pads of the chip can be connected with the corresponding stud-bumps of the substrate. In each stud-bump, the fusing material dissolves with each I / O bond-pad of the chip to electrically connect each stud-bump to each I / O bond-pad of the chip. The method includes forming an under-bump metallization (UBM) on each I / O bond-pad of the chip prior to placing the chip on the stud-bumps. The resulting structure can be manufactured using process steps that provide robust connections, use fewer process steps, and are compatible with other processes in wafer fabrication and chip assembly facilities. |