| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38cabe784f1ef1b63abdcfd77e5764e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-79 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24 |
| filingDate |
2006-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6bf9f9bbbabe43fec20ed4f7e39514a |
| publicationDate |
2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080025681-A |
| titleOfInvention |
Silicon monoxide based deposition material and method for manufacturing same |
| abstract |
In the powder sintered silicon monoxide type vapor deposition material used for forming the silicon monoxide deposited film, generation of splash is suppressed. Ensure material strength to withstand use. In order to realize these, the raw material powder which consists of precipitated SiO is sintered at 700-1000 degreeC, and a vapor deposition material is manufactured. The precipitation of Si in a sintering process is suppressed and the peak assumed from the peak intensity (P1) at the Si peak point which arises in 2θ = 28 degree vicinity, and the average intensity gradient before and after a peak point in the measurement by XRD The relationship between the base strength P2 at the point becomes P1 / P2? By selective use of precipitated SiO produced in a vacuum flocculation apparatus, the compressive fracture strength of the deposited material after sintering is increased to 5 MPa or more. |
| priorityDate |
2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |