http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080025292-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-30 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-58 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08 |
| filingDate | 2007-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd30986b9329d9030c95dea96687e49b |
| publicationDate | 2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080025292-A |
| titleOfInvention | Photomask Having Self-Masking Layer and Etching Method thereof |
| abstract | A photomask structure and etching method are provided. In one embodiment, the photomask comprises a translucent substrate and an opaque multilayer absorbent layer disposed over the substrate. The opaque multilayer absorbent layer includes a self-mask layer disposed over the bulk absorbent layer. The self mask layer comprises one of tantalum nitride and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenous tantalum-based materials (TaON). The bulk absorber layer includes one of tantalum silicide-based materials (TaSi), nitrified tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, acting as a hard mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130034634-A |
| priorityDate | 2006-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.