http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080022159-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5258
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
filingDate 2008-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04bc4c685ee4cae78ebeffc624cd1285
publicationDate 2008-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080022159-A
titleOfInvention Cutting Method of Fuse Element and Manufacturing Method of Semiconductor Device
abstract The semiconductor device includes a lower electrode, an upper electrode, and a fuse element connecting the upper electrode and the lower electrode. The height of the fuse element is greater than the depth of focus of the laser beam to be irradiated. The diameter of the fuse element is smaller than the diffraction limit of the laser beam. Thus, in the present invention, a vertically long fuse element can be used to efficiently absorb the energy of the laser beam. It is possible to cut the fuse element using an optical system having a small depth of focus, thereby minimizing damage occurring on the member located above or below the fuse element. As a result, the fuse element can be cut without destroying the passivation film.
priorityDate 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID522684
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526467

Total number of triples: 15.