http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080022159-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5258 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
filingDate | 2008-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04bc4c685ee4cae78ebeffc624cd1285 |
publicationDate | 2008-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20080022159-A |
titleOfInvention | Cutting Method of Fuse Element and Manufacturing Method of Semiconductor Device |
abstract | The semiconductor device includes a lower electrode, an upper electrode, and a fuse element connecting the upper electrode and the lower electrode. The height of the fuse element is greater than the depth of focus of the laser beam to be irradiated. The diameter of the fuse element is smaller than the diffraction limit of the laser beam. Thus, in the present invention, a vertically long fuse element can be used to efficiently absorb the energy of the laser beam. It is possible to cut the fuse element using an optical system having a small depth of focus, thereby minimizing damage occurring on the member located above or below the fuse element. As a result, the fuse element can be cut without destroying the passivation film. |
priorityDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID522684 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526467 |
Total number of triples: 15.