| abstract |
Provided are a sputtering target for forming a phase change film with low particle generation during sputtering, and a method of manufacturing the same. A structure containing 20.2 to 24.2% of Ge and 20.2 to 24.2% of Sb in atomic%, the balance having Te and inevitable impurities, and the Ge 2 Sb 2 Te 5 phase having a hexagonal structure occupying 90% or more by mass%. As a target having, the target is obtained by subjecting the ingot having the above composition to heat treatment and then sintering or sintering the pulverized raw material alloy powder after heat treatment of the alloy powder obtained by pulverizing the ingot. |