| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
| filingDate |
2006-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c0f127bf6e9b5c2a92431284a9d314b |
| publicationDate |
2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080018938-A |
| titleOfInvention |
Memory device with switching glass layer |
| abstract |
Memory device 100, such as PCRAM, comprising a chalcogenide glass backbone material having germanium telluride glass 18 in contact with metal-chalcogenide 20, such as tin selenide, and forming such a memory device The method is disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110099800-A |
| priorityDate |
2005-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |