http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080012684-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f932d94618d9b875e401457b33e9761 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-023 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4cb0b2927d56a586e671908be6adcb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_010e71e2700b26e9563a8d24f30c64b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ef4abdfbfa7390809bff55d4b65aa6c |
| publicationDate | 2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080012684-A |
| titleOfInvention | Photoresist composition and pattern formation method thereof |
| abstract | The present invention provides a photoresist composition comprising a low absorbing low molecular weight material having a light absorbency of at least one of a novolac base resin, a photosensitive agent, and wavelengths of at least one of 248 nm, 193 nm, and 157 nm, than the base resin, and the resist of the present invention. The composition has good light transmittance in the short wavelength semiconductor process of 248nm (KrF) or less even when applied as a non-chemically amplified type, and has various performances such as sensitivity, resolution, residual film rate, and coating property, and particularly a profile and a depth of focus. Composition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101586443-B1 |
| priorityDate | 2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 139.