http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080012236-A

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65f1180eab61f567ccc7282a4f22a3b6
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publicationDate 2008-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080012236-A
titleOfInvention How to grow gallium nitride crystals
abstract The gallium nitride crystal growth method includes the steps of partially forming a mask (M) on the base substrate (U) that prevents epitaxial growth of the crystal, and using a vapor phase method on the base substrate (U) on which the mask (M) is formed. Epitaxially growing the crystals, wherein, in the epitaxially growing step, the growth rate (Vj) expressed in 占 퐉 / h and the growth temperature (T) expressed in absolute temperature are the coefficient a 1 = -4.39 × 10 5 , b 1 = 3.87 × 10 2 , a 2 = -7.36 × 10 5 , b 2 = 7.37 × 10 2 , to (a 1 / T + b 1 ) <Vj <(a 2 / T + b 2 ) Crystal growth is performed under the first growth conditions indicated. In this way, the dislocation density of the crystal is reduced.
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