| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fad0246171945d5e4957c9be0b37a2f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2320-0233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2320-0252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0426 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-32 |
| filingDate |
2007-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1498caa4012bf30e913b8a0baac4097e |
| publicationDate |
2008-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080010373-A |
| titleOfInvention |
Semiconductor devices |
| abstract |
A light emitting device is provided that can execute a signal current write operation at high speed without dispersing characteristics of TFTs constituting pixels that affect the brightness of light emitting elements. The gate length L of the transistor through which the current flows during the writing of the signal current is shorter than the gate length L of the transistor through which the current supplied to the EL element flows during light emission, so that the high-speed writing is more than the current flowing through the conventional EL element. A lot of current flows through it. The conversion and driving transistor 108 is used for signal writing. By using the conversion and drive transistor 108 and the drive transistor 107 when supplying current to the light emitting element during light emission, transistor characteristic dispersion is more effective than when using a structure for performing write operation and light emission operation using different transistors. It may be less affected by the brightness. |
| priorityDate |
2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |