| abstract |
The present invention relates to a metal film etching solution, 30 to 50% by weight of phosphoric acid relative to the total weight of the composition; 2 to 10 weight percent nitric acid relative to the total weight of the composition; 5-40% by weight of acetic acid relative to the total weight of the composition; 0.1 to 10% by weight relative to the total weight of the composition, and the remaining components relative to the total weight of the composition is characterized in that it comprises water.n n n When the metal film etching solution according to the present invention is etched with a single film or a multilayer film provided with at least one selected from the group consisting of silver or silver alloy, very good etching characteristics can be provided. Furthermore, when the metal film etching solution according to the present invention is used in the manufacture of a wiring film of an array substrate for a liquid crystal display device or a reflective film of a reflective or semi-transmissive liquid crystal display device, an appropriate etching rate can be imparted to the mass production process. Good profiles can be obtained and etch uniformity can be maintained regardless of the size of the substrate. |