http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080007496-A

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filingDate 2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbd7ed7f41b79921a39d88eb3b28ae86
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publicationDate 2008-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080007496-A
titleOfInvention How to form the film
abstract In the chamber 1 having a shower head 10 and an electrode 8 serving as a pair of parallel plate electrodes, a wafer W having holes having an opening diameter of 0.13 µm or less and / or an aspect ratio of 10 or more is disposed. do. The high frequency power is supplied from the high frequency power source 34 to the shower head 10 while introducing a processing gas containing a TiCl 4 gas and a H 2 gas to form a plasma therebetween. The plasma promotes the reaction of the processing gas to form a Ti film on the wafer. At this time, the value of the flow rate (mL / min (sccm)) of the power (W) / TiCl 4 gas of the high frequency electric power is set to 67 or less.
priorityDate 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Incoming Links

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Total number of triples: 24.