http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080001396-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8917872f727f2cef074445a45c7fc6b9 |
| publicationDate | 2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080001396-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention discloses a method of manufacturing a semiconductor device capable of preventing gate misalignment in a cell region by maintaining a step of a polysilicon film deposited in an alignment key formation region. The disclosed method includes the steps of: providing a semiconductor substrate comprising a cell region and a scribe lane region, wherein the cell region is provided with a recess gate groove, and wherein the scribe lane region is provided with an alignment key groove; Depositing a polysilicon film on the entire surface of the substrate including the gate groove and the alignment key groove, selectively performing halo ion implantation into the polysilicon film in the cell region, and simultaneously implanting ion into the polysilicon film in the scribe lane region. Performing a heat treatment on the entire surface of the substrate including the ion-implanted polysilicon film and CMP the polysilicon film of each region where the heat treatment is performed to form a planarized polysilicon film in the cell region; In the scribe lane area, a polysilicon film pattern for alignment keys is formed. It is characterized by including the steps: |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101052877-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411004-B2 |
| priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.