http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070119502-A

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filingDate 2007-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20070119502-A
titleOfInvention Wafer Plating Method
abstract assignmentn n n n The present invention provides a wafer plating technique in which the plated film thickness on the entire surface of the wafer to be plated is uniform.n n n n Resolutionn n n n The wafer is placed in the opening of the plating bath, the plating solution is supplied by bringing the outer peripheral side of the wafer into contact with the cathode electrode so that the plating solution that reaches the wafer flows in the outer circumferential direction of the surface to be plated of the wafer and faces the wafer in the plating bath. In a wafer plating method in which a plating current is supplied to a wafer by supplying a plating current by the disposed anode electrode and the cathode electrode, the anode electrode has a shape substantially the same as the surface to be plated of the wafer, and a plurality of peripheral edges of the anode electrode are provided. The peripheral edge current supply part was provided, and the central current supply part was provided at the center of the anode electrode to adjust the peripheral edge plating current supplied from the peripheral edge current supply part and the central plating current supplied from the central current supply part.
priorityDate 2006-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 37.