| abstract |
It is an object of the present invention to provide a nonvolatile memory device and a semiconductor device having the same, which can add data at the time of manufacture and prevent counterfeiting by rewriting. It is another object of the present invention to provide a highly reliable and inexpensive nonvolatile memory device and a semiconductor device including the memory device. The memory device includes a first conductive layer, a second conductive layer, a first insulating layer having a thickness of 0.1 nm or more and 4 nm or less in contact with the first conductive layer, between the first conductive layer and the first insulating layer and the second conductive layer. It includes the organic compound layer interposed in. |