http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070113604-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_130ab1224f9cd61cfc316820304eab58 |
| publicationDate | 2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070113604-A |
| titleOfInvention | Method of forming fine pattern of semiconductor device |
| abstract | The present invention is to provide a method for forming a fine pattern of a semiconductor device that can improve the non-uniformity of the line critical dimension due to two times the photo mask operation during the double exposure and etching technology (DEET) process, the present invention is Depositing a hard mask on the etched layer, forming a photoresist pattern on the hard mask, and etching the hard mask through a first etching process using the photoresist pattern as an etch mask. Forming a hard mask pattern to which the substrate is exposed, forming a sacrificial pattern spacer on both sidewalls of the hard mask pattern, removing the hard mask pattern to form a sacrificial pattern, and etching the sacrificial pattern. Forming a fine pattern by etching the etched layer through a second etching process used as a mask It provides a fine pattern formation method of a semiconductor device comprising the system. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102346368-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100930388-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964510-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100949879-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100941861-B1 |
| priorityDate | 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.