http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070108643-A

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filingDate 2006-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20070108643-A
titleOfInvention Etch solution for etching aluminum, molybdenum and indium tin oxide
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching solution for a liquid crystal display device. In particular, a gate electrode composed of a double layer of molybdenum and aluminum alloy (Mo / AlNd), a source / drain electrode composed of molybdenum (Mo), and a pixel electrode composed of ITO For etching using a solution.n n n The present invention is composed of 40 ~ 70wt% phosphoric acid, 2 ~ 15wt% nitric acid, 4 ~ 35wt% acetic acid as a main component of 0.05 ~ 5wt% chlorine compound, 0.05 ~ 5wt% chlorine stabilizer, 0.05 ~ 5wt% lithium It comprises a compound, an additive containing a sulfur salt compound of 0.05 ~ 5wt% and an etching solution containing a residual amount of water.n n n As a result, by using a single etchant in each mask process as a single etchant, productivity and material cost are reduced.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020055529-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150100295-A
priorityDate 2006-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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