http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070107960-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64eedf11a130095f2cfcec72f2ca3262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ceca78a83772e14c6560a8a9fbaba48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc2af0dcfa1ba10f90adb52bd33beeea |
| publicationDate | 2007-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070107960-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The present invention provides a semiconductor device. This semiconductor element includes a semiconductor substrate having a cell array region and a peripheral circuit region, impurity diffusion regions formed in the active region of the semiconductor substrate, and a gate electrode formed adjacent to the impurity diffusion region of the cell array region. The gate electrode includes impurity ions having a conductivity type opposite to that of the impurity diffusion region of the cell array region, and the concentration of the impurity ions gradually decreases from the top to the bottom of the gate electrode. Accordingly, by reducing the electric field concentrated in the drain by the gate without changing the operating current and the threshold voltage of the semiconductor device, it is possible to provide a semiconductor device having improved gate induced drain leakage without degrading the performance of the semiconductor device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101068630-B1 |
| priorityDate | 2006-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.