http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070096456-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02326
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
filingDate 2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41720228266aa5246c74f9914b48fc72
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publicationDate 2007-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20070096456-A
titleOfInvention Semiconductor laser device and manufacturing method thereof
abstract In a monolithic double-laser semiconductor laser device capable of high power output, a window structure for each laser element is formed through a common step to improve device reliability. The semiconductor laser device has an infrared laser element 110 and a red laser element 120 integrally integrated into an n-type semiconductor substrate. Each of the infrared and red laser elements 110, 120 has a window structure formed by Zn diffusion in the ridge waveguide and each resonator facet. The infrared and red laser elements 110, 120 include p-type contact layers 109, 119 over the ridges of each waveguide. The p-type contact layer 109 is thinner than the p-type contact layer 119.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200129272-A
priorityDate 2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 19.