| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2005-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6e8e473ff1fcc7c3a26bf12b03bb9dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32db68f77ea8673c63d12371403d4480 |
| publicationDate |
2007-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070093074-A |
| titleOfInvention |
Reinforced and depleted semiconductor structures and methods for manufacturing them |
| abstract |
The ED-HEMT structure comprises a buffer layer 4 comprising a doping layer 18, a channel layer 6, a barrier layer 8 and a second doping layer 20. An enhanced mode HEMT gate 12 is formed in the via to extend through the second doped layer 20, and a depletion mode HEMT structure is formed over the second doped layer 20. This layer sequence allows the formation of enhanced and depletion mode HEMTs in the same structure with good properties. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8338241-B2 |
| priorityDate |
2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |