| abstract |
One embodiment is a non-planar MOS transistor structure with strain channel regions. The combination of the advantages of nonplanar MOS transistor structures, in particular NMOS tri-gate transistors and strain channels, can be achieved with respect to certain gates compared to nonplanar MOS structures with non strain channels or planar MOS structures with strain channels. It brings the advantages of improved transistor drive current, switching speed, and reduced leakage current over length, width. |