| abstract |
The present invention relates to the formula (PhSiO (3-x) / 2 (OH) x ) m HSiO (3-x) / 2 (OH) x ) n (MeSiO (3-x) / 2 (OH) x ) p Silsesquioxane resin (i), where Ph is a phenyl group, Me is a methyl group, x is 0, 1 or 2, m is a value from 0.05 to 0.95, n is a value from 0.05 to 0.95, p is a value of 0.05 to 0.95, m + n + p is about 1) and the step (A) of applying an antireflection film (ARC) composition comprising the solvent (ii) to the electronic device and the solvent is removed and the silsesquioxane resin And a step (B) of curing to form an antireflection film on the electronic device. |