| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd221d21998567268ab28734915df324 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01C19-574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01C19-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01C19-5769
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01H11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R19-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 |
| filingDate |
2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c1dfb91603f15750bc9e501cf851ae5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d62194c4316d0e2e86ac93b56cece024 |
| publicationDate |
2007-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070085024-A |
| titleOfInvention |
Formation method of thin film structure and thin film structure, vibration sensor, pressure sensor and acceleration sensor |
| abstract |
The present invention provides a method for forming a conductive thin film structure having a weak tensile stress in which mechanical stress is controlled, and as a means for this, an underlayer made of a polysilicon thin film on a substrate 32 such as Si. After the film 35 is formed, the lower layer film 35 is made conductive by doping an underlayer film 35 with a dopant such as P to thermally diffuse it. Subsequently, an upper layer film 36 made of a polysilicon thin film which is formed only on the lower layer film 35 and is not conductive is formed. The upper layer film 36 has a tensile stress equivalent to the compressive stress of the lower layer film 35, and the thin film structure A composed of the lower layer film 35 and the upper layer film 36 has a weak tensile stress as a whole. It is adjusted to have. |
| priorityDate |
2006-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |