| abstract |
In one aspect, the invention features a wire bond interconnection between a pad and a bond finger. The wire bond wiring comprises: a support pedestal located at the bond site of the lead finger; A ball bond on the die pad; And a stitch bond on the support pedestal. At the bond site, the lead finger is narrow, so that in some embodiments, the flat portion of the lead finger at the bond site is narrower than the diameter of the support pedestal. The semiconductor package is also mounted to the substrate and electrically connected to the substrate by a plurality of wire bonds. Wherein each wire bond comprises a wire ball connected to a pad on a substrate and a stitch bonded to a support pedestal above the bond site on the lead finger. The width of the lead finger on the bond site is smaller than the diameter of the support pedestal. In such a package, the package substrate comprises a two-layer substrate, each layer comprising a plurality of lead fingers having a lead finger bond pitch that is twice the die pad pitch. The lead fingers of the first and second layers are staggered so that the effective lead finger pitch of the two-layer substrate is approximately equal to the die pad pitch. In some embodiments, the support pedestal is formed using a wire bond finger tool in the formation of stud bumps, in which embodiment the support pedestal is metallicly connected to the lead finger. Further, a method of forming a wire bond wiring between a semiconductor die and a substrate includes: providing a die attached to a die mounting portion of a first side of a substrate and disposed away from the substrate and facing the active side, wherein the substrate is formed in the substrate; Providing the patterned trace having a lead finger in the first side of the substrate; Forming a support pedestal on the bond site of the lead finger; Forming a first bond on the die pad; And forming a second bond on the support pedestal. |