http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070071007-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e249531070137316a11ba8e9187139e2 |
| publicationDate | 2007-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070071007-A |
| titleOfInvention | Manufacturing Method of CMOS Image Sensor |
| abstract | The present invention is to provide a method of manufacturing a CMOS image sensor that can prevent the surface of the photodiode during the etch-back of the lower anti-reflection layer and the salicide-resistant nitride film for the salicide process is attacked by plasma damage, A method of manufacturing the CMOS image sensor of the present invention includes forming a salicide preventing nitride film on an upper portion of a semiconductor substrate on which photodiodes of each pixel region are formed; Forming a lower antireflection layer on the salicide barrier nitride film; Forming a photoresist pattern on the lower anti-reflection layer to cover the photodiode region of each pixel; Sequentially etching part of the lower anti-reflection layer and the salicide preventing nitride film sequentially using the photoresist pattern as an etching barrier; And selectively forming a salicide in the remaining region except for the photodiode, and the present invention described above changes the double photomask so that the photodiode is not exposed to a severe plasma damage process during the salicide process. This improves the dark signal, DBP, black signal and BBP characteristics of the CMOS image sensor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100937671-B1 |
| priorityDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 15.