http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070070689-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00e134da61b7e90bce887bf3e6e0d8b9 |
| publicationDate | 2007-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070070689-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device for preventing pattern defects and subsequent defects in a gate patterning process due to particles present in an anti-reflection film. A gate conductive film and a hard mask film are sequentially applied onto a silicon substrate. After that, an antireflection film is applied thereon to form a photoresist pattern. The hard mask layer is etched by using the photoresist pattern, and the hard mask pattern defect caused by the particles of the anti-reflection film is removed. Subsequently, the gate conductive layer is etched to form a gate pattern, and all remaining hard mask layers are removed. |
| priorityDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.