http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070069889-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c829c280dd91f749764524874ea2f7c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86921f9fd6f043100592603cc2b3f419 |
| publicationDate | 2007-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070069889-A |
| titleOfInvention | Method for manufacturing a semiconductor device having a dual poly gate |
| abstract | The present invention is to provide a method for manufacturing a semiconductor device having a dual poly gate that can easily strip the photosensitive film used in the ion implantation process without residues, the manufacturing method of the semiconductor device of the present invention is a gate on the semiconductor substrate Forming an oxide film, forming a gate conductive layer on the gate oxide film, forming an amorphous carbon layer on the gate conductive layer, forming an amorphous carbon layer photoresist pattern, and etching the photoresist pattern Etching the amorphous carbon layer to form an amorphous carbon layer pattern, implanting impurities into the gate conductive layer using the amorphous carbon layer pattern as an ion implantation barrier, and removing the amorphous carbon layer pattern Patterning the gate conductive layer to form a gate structure; Ming is an ion implantation barrier, which uses a dense amorphous carbon layer to strip the photoresist film used for high dose ion implantation for the formation of dual polygates without residues, resulting in a stable subsequent process to improve yield. It has an effect. |
| priorityDate | 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.