| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-16152
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate |
2006-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e073a4d1f735d9b27e2b606de10026f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3abe9b0443e90658281e3f478c8d89b |
| publicationDate |
2007-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070069036-A |
| titleOfInvention |
Semiconductor laser device and manufacturing method thereof |
| abstract |
The nitride semiconductor laser device element 20 includes a nitride semiconductor laser device 5 having a dielectric layer 5b made of SiO 2 formed on the light exit surface 5a, and the nitride semiconductor laser device 5 is hermetically sealed. The package part 1 is provided. In addition, the atmosphere in the package part 1 is an oxygen containing atmosphere with a moisture concentration of 5000 ppm or less and an oxygen concentration of 5% or more. By adjusting the atmosphere in the package part 1, the fall of the output and the fall of reliability resulting from the alteration of the dielectric layer which consists of oxides formed in the end surface of the semiconductor laser element can be suppressed. |
| priorityDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |