http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070055899-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43a472959310956a60cd62518712592d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C26-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate | 2005-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b170a5d75534c71441513e1733a02d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8247cdaeab0c0f2c79df81c189408f34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb35a23b4de92ce004563893967c55b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_871530d4593517218b58b160ac3e8217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67a77fdd151bc8d68ea025bc165daaa3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_441b082d60465b29aad39e4bfe2940a8 |
| publicationDate | 2007-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070055899-A |
| titleOfInvention | Method of forming polycrystalline silicon thin film by two-step deposition |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a polycrystalline silicon thin film. In particular, a silicon precursor and a plasma are alternately supplied into a reaction tube to form an crystalline silicon thin film of an atomic layer at a temperature of less than 500 ° C. By forming a separate upper silicon thin film using the silicon thin film as a seed layer, the present invention relates to a method for forming a polycrystalline silicon thin film by two-step deposition capable of forming a polycrystalline silicon thin film at a relatively low temperature.n n n In the method of forming a polycrystalline silicon thin film by two-step deposition of the present invention, the silicon precursor supply and the reducing plasma supply are sequentially performed into the reaction tube into which the substrate is introduced to deposit a crystalline silicon thin film of an atomic layer having a predetermined thickness on the substrate. And the step of depositing the upper silicon thin film on the seed layer using the crystalline silicon thin film of the atomic layer as a seed layer.n n n n Atomic layer, crystalline, silicon thin film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697519-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101496149-B1 |
| priorityDate | 2005-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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