| abstract |
The present invention relates to a method for depositing an atomic layer of a silicon thin film, and in particular, by alternately supplying a silicon precursor and a plasma into a reaction tube, the silicon thin film can be formed even at a temperature below 500 ° C., and atomic layer deposition is repeatedly performed. The present invention relates to an atomic layer deposition method of a silicon thin film capable of depositing a silicon thin film having a desired thickness.n n n The constituent means constituting the method for depositing the atomic layer of the silicon thin film of the present invention, after flowing the substrate into the reaction tube, by supplying a silicon (Si) precursor while maintaining the inside of the reaction tube at a predetermined pressure and temperature to react The first step, the second step of performing the pumping and purging to remove the remaining silicon (Si) precursor and reaction by-products without reacting in the reaction tube, by reducing the silicon (Si) precursor adsorbed on the substrate surface A third step of supplying a reducing plasma into the reaction tube to form a solid silicon (Si). And a fourth step of performing pumping and purging to remove the various ions and reaction by-products remaining without reacting in the reaction tube.n n n n Atomic layer, crystalline, silicon thin film |