| abstract |
The metal target 56 is ionized by the plasma to generate metal ions, and the metal ions are attracted to the workpiece S mounted on the mounting table 20 in the processing container by bias power, and the concave portion 2 is formed. Disclosed is a method in which a metal film 74 is deposited on an object to be processed to fill a recess. On the surface of the workpiece, the bias power is set so that a state in which the metal deposition rate by attracting metal ions and the etching rate of plasma sputter etching is approximately balanced is realized. Thereby, metal can be embedded in the recessed part of a to-be-processed object, without making defects, such as a void. |